Mitsubishi Power Semiconductor

Mitsubishi Electric has been developing and producing innovative and powerful power semiconductors for over 40 years.

Mitsubishi Electric offers a diverse range of power semiconductors covering a large spectrum of different applications. Its innovative thinking and modern production facilities enable the brand to continue to maintain its leading position in the development of new materials and processes for the affordable and environmentally friendly miniaturization of semiconductor modules.

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For over 40 years, Mitsubishi Electric has been developing and producing power semiconductors for numerous applications, be it industrial motor control, railroad technology, or the automotive industry. The company is a world leader in the field of IGBT technology and IPM and produces suitable modules for every performance class.

Advantages of Mitsubishi power semiconductors

Reliability and durability
The new resin-sealed baseplate replaces a previously soldered part, extending the thermal cycle and increasing the reliability of the inverter.
Miniaturization
The new CIB modules are 36% more compact than Mitsubishi Electric's existing modules.
Efficiency
The development of the Carrier-stored Trench Gate Bipolar Transistor (CSTBT™) enables reduced voltage loss and further miniaturization with the introduction of the 7th-generation IGBT.

Diode | IPM | IGBT | SiC from Mitsubishi

Type Max. Rating Package
Type MISOP Max. Rating 600V / 3A Package SMD
Type DIPIPM‘s Max. Rating 1200V / 75A Package THD
Type IPM‘s Max. Rating 1200V / 450A Package A / B / C
Type IGBT Modules Max. Rating 1700V / 1800A Package Std / NX
Type HVIGBT Modules Max. Rating 6500V / 2400A Package Std
Type Power MOSFET Modules Max. Rating 150V / 300A Package Divers
Type Diode Modules Max. Rating 6500V / 1500A Package Divers
Type SiC SBD Max. Rating 1200V / 20A Package TO220 / TO247
Type SiC Power Modules Max. Rating 17VV / 1200V Package Std / NX

The new package structure of the 7th-generation IGBT provides greater reliability and minimizes voltage loss compared to the 6th-generation IGBT.

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Philippe Muller

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